ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
STATIC P/N OM1N100SA (See Note 3)
STATIC P/N OM3N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
1000
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V, VDS = 0
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS = - 20 V, VDS = 0
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
DSS
Zero Gate Voltage
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.25
mA
V
DS = Max. Rat., VGS = 0
Drain Current
1.0
mA
V
DS = 0.8 x Max. Rat.,
Current
1.0
mA
V
DS = 0.8 x Max. Rat.,
V
GS = 0, TC = 125° C
V
GS = 0, TC = 125° C
I
D(on)
On-State Drain Current
1.0
A
V
DS > ID(on) x RDS(on) Max.
I
D(on)
On-State Drain Current
3.5
A
V
DS > ID(on) x RDS(on) Max
V
GS = 10 V
V
GS = 10 V
R
DS(on)
Static Drain-Source On-State
SA
8.0
V
GS = 10 V
R
DS(on)
Static Drain-Source On-State
SA
5.2
V
GS = 10 V
Resisitance1, 3
ST
8.2
I
D =.5A
Resistance1, 3
ST
5.4
I
D =.5A
R
DS(on)
Static Drain-Source On-State
SA
15.0
V
GS = 10 V
R
DS(on)
Static Drain-Source On-State
SA
10.0
V
GS = 10 V
Resistance1, 3
ST
15.4
I
D =.5A, TC = 100° C
Resistance1, 3
ST
10.4
I
D =.5A, TC = 100° C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1.0
S
V
DS = 10V, ID = 1 A
g
fs
Forward Transductance
1.0
S
V
DS = 10, ID = 1.5 A
C
iss
Input Capacitance
950
pF
V
GS = 0
C
iss
Input Capacitance
950
pF
V
GS = 0
C
oss
Output Capacitance
110
pF
V
DS = 25 V
C
oss
Output Capacitance
110
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
90
ns
T
d(on)
Turn-On Delay Time
90
ns
t
r
Rise Time
90
ns
t
r
Rise Time
90
ns
T
d(off)
Turn-Off Delay Time
115
ns
T
d(off)
Turn-Off Delay Time
115
ns
t
f
Fall Time
75
ns
t
f
Fall Time
75
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
3.5
A
Modified MOSPOWER
I
S
Continuous Source Current
3.5
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
14
A
the integral P-N
I
SM
Source Current1
14
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage2
2.5
V
T
C = 25 C, IS = 3.5 A, VGS = 0
V
SD
Diode Forward Voltage2
2.5
V
T
C = 25 C, IS = 3.5 A, VGS = 0
t
rr
Reverse Recovery Time
900
ns
I
F = IS, VDD = 100 V
t
rr
Reverse Recovery Time
900
ns
I
F = IS, VDD = 100 V
dl
F/ds = 100 A/ms, TJ = 150 C
dl
F/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle
1.5%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
1.5%.
2 Pulse Width limited by safe operating area.
2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except R
DS(on)
3 OM3N100ST - All characteristics the same except R
DS(on)
VDD = 600 V, ID = 3.5
RG = 50W, VGS = 10 V
VDD = 600 V, ID = 3.5
RG = 50W, VGS = 10 V
G
D
S
G
D
S
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