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CMH02A Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. CMH02A
Description  Switching Mode Power Supply Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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CMH02A Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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CMH02A
2006-11-08
1
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH02A
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: VRRM = 400 V
• Average forward current: IF (AV) = 3.0 A
• Low forward voltage: VFM=1.8 V (Max.)
• Very fast reverse recovery time: trr =35ns (Max.)
• Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
400
V
Average forward current
IF (AV)
3.0 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
30 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature range
Tstg
−40~150
°C
Note 1: Tℓ=77°C
Device mounted on a ceramic board
board size: 50 mm
× 50 mm
soldering land: 2 mm
×2 mm
board thickness:0.64t
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 0.1 A (pulse test)
0.78
VFM (2)
IFM = 1.0 A (pulse test)
1.1
Peak forward voltage
VFM (3)
IFM = 3.0 A (pulse test)
1.4
1.8
V
Peak repetitive reverse current
IRRM
VRRM = 400 V (pulse test)
10
μA
Reverse recovery time
trr
IF = 1 A, di/dt = −30 A/μs
35
ns
Forward recovery time
tfr
IF = 1.0 A
100
ns
Device mounted on a ceramic board
(board size: 50 mm
× 50 mm)
(soldering land: 2 mm
× 2 mm)
(board thickness: 0.64 t)
60
Device mounted on a glass-epoxy board
(board size: 50 mm
× 50 mm)
(soldering land: 6 mm
× 6 mm)
(board thickness: 1.6 t)
135
Thermal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
× 50 mm)
(soldering land: 2.1 mm
× 1.4 mm)
(board thickness: 1.6 t)
210
°C/W
Thermal resistance
(junction to lead)
Rth (j-ℓ)
16
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)


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