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CLH02 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. CLH02
Description  Switching Mode Power Supply Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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CLH02 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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CLH02
2006-11-08
1
TOSHIBA High-Efficiency Rectifier Silicon Epitaxial Type
CLH02
Switching Mode Power Supply Applications
• Forward voltage: VFM = 1.3 V (Max.)
• Average forward current: IF (AV) = 3 A
• Repetitive peak reverse voltage: VRRM = 300 V
• Surface-mount package
L−FLAT” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
300
V
Average forward current
IF(AV)
3 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
50 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature range
Tstg
−40~150
°C
Note 1: Tℓ
= 125°C
Rectangular waveform : (
α = 180°)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM =0.7 A (pulse test)
0.85
VFM (2)
IFM = 1.0A (pulse test)
0.89
V
Peak forward voltage
VFM (3)
IFM = 3.0 A (pulse test)
1.05
1.3
Repetitive peak reverse current
IRRM
VRRM = 300 V (pulse test)
10
μA
Reverse recovery time
trr
IF = 2A, di/dt = − 50A/μs
35
ns
Forward recovery time
tfr
IF = 1.0 A
100
ns
Themal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a glass-epoxy
board (board size:50mm x 50mm)
(board thickness:1.6t)
(soldering land)
Cathode:5.7mm x 6.2mm
Anode :4.5mm x 3.4mm
100
°C/W
Themal resistance
(junction to lead)
Rth (j-ℓ)
5
°C/W
Unit: mm
① アノード
② カソード
CATHODE
ANODE
JEDEC
JEITA
TOSHIBA
3-4F1A
Weight: 0.15 g (typ.)


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