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RN1109 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1109 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page RN1107~1109 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107~2109 Equivalent Circuit and Bias Resistor Values Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V RN1107 6 RN1108 7 Emitter-base voltage RN1109 VEBO 15 V Collector current RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 °C Storage temperature range RN1107~1109 Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― EIAJ ― TOSHIBA 2-2H1A Weight: 2.4mg Unit: mm Type No. R1 (kΩ)R2 (kΩ) RN1107 10 47 RN1108 22 47 RN1109 47 22 |
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