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RN1109 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # RN1109
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1109 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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RN1107~1109
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
RN1107~1109
VCBO
50
V
Collector-emitter voltage
RN1107~1109
VCEO
50
V
RN1107
6
RN1108
7
Emitter-base voltage
RN1109
VEBO
15
V
Collector current
RN1107~1109
Ic
100
mA
Collector power dissipation
RN1107~1109
Pc
100
mW
Junction temperature
RN1107~1109
Tj
150
°C
Storage temperature range
RN1107~1109
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
EIAJ
TOSHIBA
2-2H1A
Weight: 2.4mg
Unit: mm
Type No.
R1 (kΩ)R2 (kΩ)
RN1107
10
47
RN1108
22
47
RN1109
47
22


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