SSM3J16FU datasheet(3/5 Pages) TOSHIBA

Part #	SSM3J16FU

Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

SSM3J16FU

2007-11-01

3

ID – VGS

Gate - Source voltage VGS (V)

-0.01

0

-1

-1000

-2

-4

-3

-1

-0.1

-10

-100

Ta

= 100°C

Common Source

VDS = -3 V

−25°C

25°C

ID – VDS

Drain - Source voltage VDS (V)

0

-100

-250

-1

-2

-1.5

-0.5

-50

-150

-200

VGS = -1.5 V

-2.3

-2.5

-2.7

Common Source

Ta

= 25°C

-3

-4

-10

-2.1

-1.9

-1.7

RDS (ON) – VGS

Gate- Source voltage VGS (V)

-10

-8

-6

-4

-2

0

25℃

Common Source

ID = -1 mA

Ta=100℃

6

.4

20

1.2

1.6

10

8

1.4

1.8

2

-25℃

Drain current ID (mA)

0

-1

10

-1000

-10

5

15

20

-100

25

RDS (ON) – ID

VGS = -1.5 V

-4 V

-2.5 V

0

−25

10

40

50

150

125

0

5

25

30

75

20

-2.5 V, -10mA

VGS =−1.5 V, ID=-1mA

Common Source

15

35

25

100

RDS (ON) – Ta

Ambient temperature Ta (°C)

-4V, -10mA

Vth – Ta

Ambient temperature Ta (°C)

0

−25

-0.4

-2

50

150

125

0

-0.2

-1.2

-1.6

75

-1

Common Source

ID = -0.1 mA

VDS = -3 V

-0.8

-1.8

25

100

-0.6

-1.4

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