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RN4606 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN4606 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page RN4606 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 4.7kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA JEDEC ― EIAJ ― TOSHIBA 2-3N1A Weight: 0.015g Unit in mm |
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