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RN1414 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. RN1414
Description  Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1414 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN1414
∼RN1418
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1414~1418
ICBO
VCB = 50V, IE = 0
100
nA
Collector cut-off
current
RN1414~1418
ICEO
VCE = 50V, IB = 0
500
nA
RN1414
VEB = 5V, IC = 0
0.35
0.65
RN1415
VEB = 6V, IC = 0
0.37
0.71
RN1416
VEB = 7V, IC = 0
0.36
0.68
RN1417
VEB = 15V, IC = 0
0.78
1.46
Emitter cut-off current
RN1418
IEBO
VEB = 25V, IC = 0
0.33
0.63
mA
RN1414~16,
18
50
DC current gain
RN1417
hFE
VCE = 5V, IC = 10mA
30
Collector-emitter
saturation voltage
RN1414~1418
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
RN1414
0.6
2.0
RN1415
0.7
2.5
RN1416
0.8
2.5
RN1417
1.5
3.5
Input voltage (ON)
RN1418
VI (ON)
VCE = 0.2V, IC = 5mA
2.5
10.0
V
RN1414
0.3
0.9
RN1415
0.3
1.0
RN1416
0.3
1.1
RN1417
0.3
2.3
Input voltage (OFF)
RN1418
VI (OFF)
VCE = 5V, IC = 0.1mA
0.5
5.7
V
Transition frequency
RN1414~1418
fT
VCE = 10V, IC = 5mA
250
MHz
Collector Output
capacitance
RN1414~1418
Cob
VCB = 10V, IE = 0,
f = 1MHz
3.0
6.0
pF
RN1414
0.7
1.0
1.3
RN1415
1.54
2.2
2.86
RN1416
3.29
4.7
6.11
RN1417
7.0
10.0
13.0
Input resistor
RN1418
R1
32.9
47.0
61.1
kΩ
RN1414
0.1
RN1415
0.22
RN1416
0.47
RN1417
2.13
Resistor ratio
RN1418
R1/R2
4.7


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