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2SK3473 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3473
Description  Silicon N Channel MOS Type Switching Regulator Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SK3473
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
ID = ±10 μA, VGS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
1.3
1.6
Ω
Forward transfer admittance
⎪Yfs
VDS = 15 V, ID = 4 A
3.0
6.5
S
Input capacitance
Ciss
1450
Reverse transfer capacitance
Crss
30
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
155
pF
Rise time
tr
30
Turn-on time
ton
55
Fall time
tf
12
Switching time
Turn-off time
toff
75
ns
Total gate charge
Qg
38
Gate-source charge
Qgs
22
Gate-drain charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 9 A
16
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
9
A
Pulse drain reverse current
(Note 1)
IDRP
27
A
Forward voltage (diode)
VDSF
IDR = 9 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1350
ns
Reverse recovery charge
Qrr
IDR = 9 A, VGS = 0 V,
dIDR/dt = 100 A/μs
15
μC
Marking
RL =
100
Ω
0 V
10 V
VGS
VDD ∼− 400 V
ID = 4 A
VOUT
4.7
Ω
Duty <= 1%, tw = 10 μs
K3473
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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