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2SK3471 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3471 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK3471 2006-11-02 2 Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-OFF current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.25 A ⎯ 10 18 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.25 A 0.2 0.4 ⎯ S Input capacitance Ciss ⎯ 75 ⎯ Reverse transfer capacitance Crss ⎯ 7 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 24 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-ON time ton ⎯ 18 ⎯ Fall time tf ⎯ 54 ⎯ Switching time Turn-OFF time toff ⎯ 95 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 3.8 ⎯ Gate-source charge Qgs ⎯ 1.9 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 0.5 A ⎯ 1.9 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 0.5 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 1.5 A Forward voltage (diode) VDSF IDR = 0.5 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr ⎯ 190 ⎯ ns Reverse recovery charge Qrr IDR = 0.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 380 ⎯ nC Duty <= 1%, tw = 10 μs 0 V 10 V VGS RL = 1 kΩ VDD ∼− 250 V ID = 0.25 A VOUT Z G Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
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