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2SK3471 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3471
Description  Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3471 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3471
2006-11-02
2
Marking
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.25 A
10
18
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 0.25 A
0.2
0.4
S
Input capacitance
Ciss
75
Reverse transfer capacitance
Crss
7
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
24
pF
Rise time
tr
11
Turn-ON time
ton
18
Fall time
tf
54
Switching time
Turn-OFF time
toff
95
ns
Total gate charge
(gate-source plus gate-drain)
Qg
3.8
Gate-source charge
Qgs
1.9
Gate-drain (“miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 0.5 A
1.9
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
0.5
A
Pulse drain reverse current
(Note 1)
IDRP
1.5
A
Forward voltage (diode)
VDSF
IDR = 0.5 A, VGS = 0 V
−1.5
V
Reverse recovery time
trr
190
ns
Reverse recovery charge
Qrr
IDR = 0.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
380
nC
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 1 kΩ
VDD ∼− 250 V
ID = 0.25 A
VOUT
Z
G
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.


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