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2SK3462 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3462 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3462 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 1.2 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.5 A 0.5 2.2 ⎯ S Input capacitance Ciss ⎯ 267 ⎯ Reverse transfer capacitance Crss ⎯ 32 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 98 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-on time ton ⎯ 20 ⎯ Fall time tf ⎯ 5 ⎯ Switching time Turn-off time toff ⎯ 30 ⎯ ns Total gate charge Qg ⎯ 12 ⎯ Gate-source charge Qgs ⎯ 6 ⎯ Gate-drain charge Qgd VDD ∼− 200 V, VGS = 10 V, ID = 3 A ⎯ 6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 6 A Forward voltage (diode) VDSF IDR = 3 A, VGS = 0 V ⎯ ⎯ −2.0 V Reverse recovery time trr ⎯ 125 ⎯ ns Reverse recovery charge Qrr IDR = 3 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 470 ⎯ nC Marking RL = 67 Ω 0 V 10 V VGS VDD ∼− 100 V ID = 1.5 A VOUT 4.7 Ω Duty <= 1%, tw = 10 μs K3462 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SK3462_06 |
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Similar Description - 2SK3462_06 |
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