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2SK3462 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3462 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3462 2006-11-21 5 0 25 20 40 60 100 80 50 75 100 125 150 Safe operating area Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (S) Drain-source voltage VDS (V) 0.01 1 0.1 0.03 0.05 1 0.3 0.5 10 3 5 100 30 50 10 3 5 100 30 50 1000 300 500 DC 100 μs * 1 ms * ID max (pulsed) * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max ID max (continuous) 1 0.1 10 μ 100 μ 10 1 m 10 m 100 m 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W Duty = 0.5 0.01 0.03 0.05 0.3 0.5 3 5 −15 V 15 V Test circuit Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 6.7 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS |
Similar Part No. - 2SK3462_06 |
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Similar Description - 2SK3462_06 |
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