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2SK3445 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3445 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3445 2006-11-21 5 Pulse width tw (S) rth – tw Drain-source voltage VDS (V) Safe operating area Channel temperature (initial) Tch (°C) EAS – Tch RG = 25 Ω VDD = 50 V, L = 2.06 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Waveform IAR BVDSS VDD VDS Test circuit −15 V 15 V 1 0.1 10 μ 100 μ 10 1 m 10 m 100 m 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.01 0.1 1 10 100 1000 1 10 100 DC operation Tc = 25°C 100 μs* 1 ms* ID max (pulsed) * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) VDSS max 500 400 300 200 100 0 25 50 75 100 125 150 |
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