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2SK3445 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3445 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3445 2006-11-21 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 0.06 0.12 0.18 0.3 −80 −40 0 40 80 120 160 ID = 20 A 5 0.24 10 Common source VGS = 10 V Pulse test 1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.6 −2.0 10 100 1000 Common source Tc = 25°C Pulse test VGS = 0 V 3 5 10 −1.4 −1.8 3 0 −80 −40 0 40 120 160 80 1 2 5 6 4 Common source VDS = 10 V ID = 1 mA Pulse test 40 80 10 0 40 80 120 200 120 160 160 200 50 100 0 0 20 40 60 100 150 200 80 250 VDD = 200 V 100 V 50 V VGS VDS Common source ID = 20 A Tc = 25°C Pulse test 0 4 8 12 16 20 10 0.1 1 10 100 100 1000 30000 1000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Tc = 25°C |
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