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2SK3441 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. 2SK3441
Description  Silicon N Channel MOS Type DC-DC Converter Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK3441 Datasheet(HTML) 5 Page - Toshiba Semiconductor

   
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2SK3441
2006-11-17
5
Channel temperature (initial) Tch (°C)
EAS – Tch
rth – tw
Pulse width tw (s)
0 V
15 V
Test circuit
Waveform
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 25 V, L = 236 μH
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
Drain-source voltage VDS (V)
Safe operating area
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0°C/W
Duty
= 0.5
0.2
0.1
Single
0.05
0.02
0.01
600
400
300
200
100
0
25
50
75
100
125
150
500
0.1
0.1
1
10
100
1000
1
10
1000
100
*: Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature
ID max (pulsed) *
100
μs *
1 ms *
ID max
(continuous)
DC operation
Tc
= 25°C
VDSS max


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