 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
2SK3441 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
|
||||||||||||||||||||||||||||||
2SK3441 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
|
|
5 / 6 page 
2SK3441 2006-11-17 5 Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (s) 0 V 15 V Test circuit Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 25 V, L = 236 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Drain-source voltage VDS (V) Safe operating area 0.01 0.00001 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.2 0.1 Single 0.05 0.02 0.01 600 400 300 200 100 0 25 50 75 100 125 150 500 0.1 0.1 1 10 100 1000 1 10 1000 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature ID max (pulsed) * 100 μs * 1 ms * ID max (continuous) DC operation Tc = 25°C VDSS max |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
