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2SK3441 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. 2SK3441
Description  Silicon N Channel MOS Type DC-DC Converter Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK3441 Datasheet(HTML) 4 Page - Toshiba Semiconductor

   
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2SK3441
2006-11-17
4
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Case temperature Tc (°C)
Vth – Tc
Case temperature Tc (°C)
PD – Tc
Total gate charge Qg (nC)
Dynamic input/output characteristics
−40
0
40
80
120
160
−80
Common source
Pulse test
6
2
0
ID = 70 A
35
4
10
8
12
15
ID = 15, 35, 70 A
VGS = 4 V
VGS = 10 V
0
1
−0.4
3
10
100
300
−0.8
−1.2
−2.0
Common source
Tc
= 25°C
Pulse test
VGS = 0, −1 V
10
3
5
5
30
50
−1.6
0
2
3
4
5
−80
−40
0
40
120
160
80
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
200
120
10
0
40
80
120
160
40
80
160
200
0
5
10
20
25
15
0
10
30
40
50
20
24
Common source
ID = 75 A
Tc
= 25°C
Pulse test
0
160
320
80
240
400
VDS
VDD = 48 V
12
VGS
0.1
300
500
1000
100000
1
10
100
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
3000
5000
10000
30000
50000
0.3 0.5
3
5
30 50


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