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2SK3439 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3439 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3439 2006-11-16 5 Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area 10 0.01 0.00001 0.1 1 3 0.0001 0.001 0.01 0.1 1 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.2 0.1 Single 0.05 0.02 0.01 0.3 0.03 0 V 15 V Test circuit Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 24 V, L = 100 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 1000 800 600 400 200 0 25 50 75 100 125 150 0.1 0.1 1 10 100 300 1 10 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature ID max (continuous) ID max (pulsed) * 100 μs * DC operation Tc = 25°C 1 ms * VDSS max 30 0.3 3 |
Similar Part No. - 2SK3439_06 |
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Similar Description - 2SK3439_06 |
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