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2SK3437 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3437
Description  Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3437 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3437
2006-11-08
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.74
1.0
Ω
Forward transfer admittance
⎪Yfs
VDS = 15 V, ID = 5 A
2.0
4.5
S
Input capacitance
Ciss
1200
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
130
pF
Rise time
tr
13
Turn-ON time
ton
40
Fall time
tf
8
Switching time
Turn-OFF time
toff
50
ns
Total gate charge
(gate-source plus gate-drain)
Qg
28
Gate-source charge
Qgs
16
Gate-drain (“miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
30
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1600
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
17
μC
Marking
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 60 Ω
VDD ∼− 300 V
ID = 5 A
VOUT
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3437
Part No. (or abbreviation code)


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