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2SK3417 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3417 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3417 2006-11-06 5 Pulse width tw (S) rth − tw EAS – Tch Channel temperature (initial) Tch (°C) −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 12.2 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 0 25 40 80 120 200 160 50 75 100 125 150 Safe operating area Drain-source voltage VDS (V) DC operation Tc = 25°C 0.01 1 10 100 1000 0.03 0.1 0.3 1 3 30 100 100 μs * 1 ms * ID max (pulsed) * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 ID max (continuous) * VDSS max 0.001 0.001 1 0.1 10 μ 100 μ 10 1 m 10 m 100 m 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 3.57°C/W Duty = 0.5 0.01 |
Similar Part No. - 2SK3417_06 |
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Similar Description - 2SK3417_06 |
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