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2SK3397 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3397
Description  Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3397 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3397
2006-11-16
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 35 A
4.0
6.0
m
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 35 A
55
110
S
Input capacitance
Ciss
5000
Reverse transfer capacitance
Crss
550
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1000
pF
Rise time
tr
8.0
Turn-ON time
ton
25
Fall time
tf
48
Switching time
Turn-OFF time
toff
180
ns
Total gate charge
(gate-source plus gate-drain)
Qg
110
Gate-source charge
Qgs
87
Gate-drain (“miller”) charge
Qgd
VDD ∼− 24 V, VGS = 10 V, ID = 70 A
23
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
70
A
Pulse drain reverse current
(Note 1)
IDRP
210
A
Forward voltage (diode)
VDSF
IDR = 70 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
40
ns
Reverse recovery charge
Qrr
IDR = 70 A, VGS = 0 V,
dIDR/dt = 30 A/μs
40
nC
Marking
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 0.43 Ω
VDD ∼− 15 V
ID = 35 A
VOUT
K3397
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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