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2SK3397 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3397 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3397 2006-11-16 4 Vth − Tc 0 −80 0 40 80 120 160 −40 1 2 RDS (ON) − Tc 0 20 4 12 8 −40 −80 160 0 40 120 80 IDR − VDS PD − Tc 200 50 100 150 0 0 80 40 160 120 40 0 30 20 10 0 80 120 40 10 5 20 0 15 16 100 1000 0.1 100 10000 1 10 3 4 160 200 −0.4 0 −0.8 −1.2 −1.6 1 10 1000 100 ID = 15,35A 70 Common source VGS = 10 V Pulse Test −2.0 Common source Tc = 25°C Pulse Test VGS = 0, −1 V 1 10 5 3 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss 5 200 50 25 VDD = 24V 12 6 VDS VGS Common source ID = 70 A Tc = 25°C Pulse Test Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) Ambient temperature Ta (°C) Drain-source voltage VDS (V) Dynamic input / output characteristics Common source VDS = 10 V ID = 1mA Pulse Test |
Similar Part No. - 2SK3397_06 |
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Similar Description - 2SK3397_06 |
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