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JDV2S29FS Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. JDV2S29FS
Description  VCO for UHF Band Radio
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

JDV2S29FS Datasheet(HTML) 1 Page - Toshiba Semiconductor

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JDV2S29FS
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S29FS
VCO for UHF Band Radio
• High capacitance ratio : C1V/C4V =2.8 (typ.)
• Low series resistance : rs = 0.66 Ω (typ.)
• This device is suitable for use in small tuners.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 6 V
1
nA
C1V
VR = 1 V, f = 1 MHz
3.59
3.87
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.26
1.4
pF
Capacitance ratio
C1V/C4V
2.73
2.91
Series resistance
rs
VR = 1 V, f = 470 MHz
0.66
0.77
Ω
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.2
0.1±0.05
0.6±0.05
A
0.48+0.02
-0.03
±0.05
A
M
0.07


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