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2SK3373 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3373
Description  Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3373 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3373
2006-11-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1 A
2.9
3.2
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 1 A
0.8
1.7
S
Input capacitance
Ciss
380
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turn-on time
ton
25
Fall time
tf
20
Switching time
Turn-off time
toff
80
ns
Total gate charge
(gate-source plus gate-drain)
Qg
9
Gate-source charge
Qgs
5
Gate-drain (“Miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 2 A
4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
2
A
IDRP
t
= 1 ms
5
Pulse drain reverse current
(Note 1)
IDRP
t
= 100 μs
12
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
−1.5
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.5
μC
Marking
K3373
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 200 Ω
VDD ∼− 200 V
ID = 1 A
VOUT


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