Electronic Components Datasheet Search |
|
2SK3373 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
2SK3373 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3373 2006-11-06 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 2 Pulse (t = 1 ms) (Note 1) IDP 5 Drain current Pulse (t = 100 μs) (Note 1) IDP 12 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 112 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) |
Similar Part No. - 2SK3373 |
|
Similar Description - 2SK3373 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |