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2SK3371 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3371 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3371 2006-11-08 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 6.4 9.0 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.5 A 0.4 0.85 ⎯ S Input capacitance Ciss ⎯ 190 ⎯ Reverse transfer capacitance Crss ⎯ 15 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 55 ⎯ pF Rise time tr ⎯ 12 ⎯ Turn-on time ton ⎯ 55 ⎯ Fall time tf ⎯ 40 ⎯ Switching time Turn-off time toff ⎯ 90 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 9 ⎯ Gate-source charge Qgs ⎯ 3.5 ⎯ Gate-drain (“Miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 1 A ⎯ 5.5 ⎯ nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current IDR ⎯ ⎯ ⎯ 1 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 2 A Diode forward voltage VDSF IDR = 1 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 400 ⎯ ns Reverse recovery charge Qrr IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 1.4 ⎯ μC Marking Duty <= 1%, tw = 10 μs 0 V 10 V VGS RL = 600 Ω VDD ∼− 300 V ID = 0.5 A VOUT K3371 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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