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2SK3371 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3371
Description  Silicon N-Channel MOS Type Switching Regulator Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SK3371
2006-11-08
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
6.4
9.0
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 0.5 A
0.4
0.85
S
Input capacitance
Ciss
190
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
55
pF
Rise time
tr
12
Turn-on time
ton
55
Fall time
tf
40
Switching time
Turn-off time
toff
90
ns
Total gate charge
(gate-source plus gate-drain)
Qg
9
Gate-source charge
Qgs
3.5
Gate-drain (“Miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 1 A
5.5
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
1
A
Pulse drain reverse current
IDRP
2
A
Diode forward voltage
VDSF
IDR = 1 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
400
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/μs
1.4
μC
Marking
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 600 Ω
VDD ∼− 300 V
ID = 0.5 A VOUT
K3371
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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