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2SK3342 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3342 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3342 2007-01-16 4 Case temperature Tc (°C) 0 −100 0 50 100 150 200 −50 1 2 Total gate charge Qg (nC) RDS (ON) − Tc Case temperature Tc (°C) 0 3.0 0.5 1.5 1.0 −50 −100 200 0 50 150 100 IDR − VDS Drain-source voltage VDS (V) Dynamic input / output characteristics 250 0 200 150 100 0 10 5 2.0 3 5 15 20 0.5 0 1.0 1.5 2.0 0.1 1 100 10 ID = 4.5A 2 1 Common source VDS = 10 V Pulse Test Common source VDS = 10 V ID = 1mA Pulse Test VDD = 200V VDS VGS Common source ID = 4.5 A Tc = 25°C Pulse Test Common source Tc = 25°C Pulse Test VGS = 0V −1 10 5 3 2.5 4 50 25 0 20 15 10 5 Common source VGS = 0 V f = 1MHZ Tc = 25°C Capacitance – VDS Drain-source voltage VDS (V) 10 1000 30 100 50 0.3 0.1 30 0.5 1 5 3 300 500 PD − Tc Case temperature Tc (°C) 0 40 10 0 200 40 80 160 120 20 30 10 Ciss Coss Crss 100V 50V Vth − Tc |
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