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2SK3309 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3309 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3309 2006-11-06 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 20 60 40 100 80 200 0 40 80 120 160 500 400 0 100 200 300 0 10 20 30 50 40 Common source ID = 10 A Tc = 25°C Pulse test VDS 360 180 VGS VDD = 90 V 0 4 8 12 20 16 160 0 1 3 2 6 5 4 −80 −40 0 40 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 0.01 −0.4 0.1 1 10 100 −0.6 −0.8 −1.2 5 −0.2 −1 10 1 3 VGS = 0, −1 V Common source Tc = 25°C Pulse test 1 0.1 10 100 1000 10000 1 10 100 1000 Common source VGS = 0 V f = 1 MHz Ciss Coss Crss 2.0 1.2 0 −80 −40 0 40 80 160 120 0.4 0.8 ID = 10 A 2.5 5 1.6 Common source VGS = 10 V Pulse test |
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