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2SK3302 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK3302
Description  Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK3302 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK3302
2006-11-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.)
High forward transfer admittance: |Yfs| = 0.4 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
0.5
Drain current
Pulse
(Note 1)
IDP
1.5
A
Drain power dissipation
PD
1.3
W
Single pulse avalanche energy
(Note 2)
EAS
14.3
mJ
Avalanche current
IAR
0.5
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 100 mH, RG = 25 Ω, IAR = 0.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8MIB
Weight: 1.9 g (typ.)


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