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2SK3302 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3302 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3302 2006-11-06 4 Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input/output characteristics 24 0 −80 −40 120 160 40 8 16 40 32 0 80 Common source VGS = 10 V Pulse test ID = 0.1 A 0.25 0.5 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 Common source Tc = 25°C Pulse test 0.03 0.05 0.3 0.5 VGS = 0, −1 V 3 1 10 0.1 1 10 100 1 10 100 0.3 0.5 3 5 30 50 3 5 30 50 300 Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss 0 1 2 3 5 −80 −40 0 40 80 120 160 4 Common source VDS = 10 V ID = 1 mA Pulse test 0 0 40 80 120 160 200 0.4 0.8 1.2 1.6 0 2 8 10 4 4 8 12 16 20 0 100 200 300 400 500 6 Common source ID = 0.5 A Ta = 25°C Pulse test VDD = 100 V 200 VDS VGS 0 400 |
Similar Part No. - 2SK3302_06 |
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Similar Description - 2SK3302_06 |
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