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2SK3205 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3205 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK3205 2006-11-20 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 150 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 150 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V RDS (ON) VGS = 4 V, ID = 2.5 A — 0.54 0.75 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A — 0.36 0.5 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 2.0 4.5 — S Input capacitance Ciss — 330 — Reverse transfer capacitance Crss — 50 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 145 — pF Rise time tr — 10 — Turn−on time ton — 15 — Fall time tf — 10 — Switching time Turn−off time toff — 60 — ns Total gate charge (Gate−source plus gate−drain) Qg — 12 — Gate−source charge Qgs — 8 — Gate−drain (“miller”) charge Qgd VDD ≈ 120 V, VGS = 10 V, ID = 5 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 110 — ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs — 0.47 — nC Marking K3205 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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