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2SK3205 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK3205
Description  Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3205 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3205
2006-11-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
−π−MOSV)
2SK3205
Switching Regulator Applications DC−DC Converter, and
Motor Drive Applications
4 V gate drive
Low drain−source ON resistance
: RDS (ON) = 0.36 Ω (typ.)
High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 150 V)
Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
150
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
150
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
71
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, IAR = 5 A, RG = 25 Ω
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
SC-64
TOSHIBA
2-7B3B
Weight: 0.36 g (typ.)


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