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2SK3205 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3205 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK3205 2006-11-20 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 −π−MOSV) 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 150 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 150 V Drain−gate voltage (RGS = 20 kΩ) VDGR 150 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 5 Drain current Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 71 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, IAR = 5 A, RG = 25 Ω Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC — JEITA SC-64 TOSHIBA 2-7B3B Weight: 0.36 g (typ.) |
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