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2SK3125 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3125 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3125 2006-11-16 4 RDS (ON) − Tc IDR − VDS Dynamic input/output characteristics PD − Tc Case temperature Tc (°C) Drain-source voltage VDS (V) Total gate charge Qg (nC) Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) 0 −80 −40 0 40 80 120 160 1 2 3 5 4 Common source VDS = 10 V ID = 1 mA Pulse test 6 0 0 20 40 80 200 Common source ID = 70 A Tc = 25°C Pulse test 120 10 30 40 VDD = 24 V VDS VGS 50 160 0 10 20 5 15 25 12 0 50 150 100 200 0 40 120 200 80 160 −80 −40 0 40 80 120 160 0 4 8 12 16 20 Common source VGS = 10 V Pulse test ID = 15, 30 A 70 1000 Common source Tc = 25°C Pulse test VGS = 0 V, −1 V 3 5 1 10 10 100 1 00.4 1.2 0.8 1.6 2.0 |
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