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2SK3085 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3085 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3085 2006-11-08 3 1 0 5 0 2.0 2 0.4 1.2 3 0.8 1.6 4 Common source Tc = 25 °C Pulse test 15 10 8 7 6 5.5 5 4.8 4.6 4.4 4.2 VGS = 4 V 2 0 10 0 4 4 1 3 6 2 8 25 Common source VDS = 20 V Pulse test Tc = −55 °C 100 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ⎪Yfs⎪ – ID Gate-source voltage VGS (V) RDS (ON) – ID Drain current ID (A) Drain current ID (A) ID – VDS VDS – VGS 10 0.5 3 1 5 0.3 0.3 0.1 0.5 1 3 5 10 Tc = −55 °C Common source VDS = 20 V Pulse test 25 100 10 0.5 3 1 5 0.3 0.3 0.1 0.5 1 3 5 10 VGS = 10, 15 V Common source Tc = 25 °C Pulse test 4 0 20 0 5 8 1 3 12 2 4 16 Common source Tc = 25 °C Pulse test 15 10 6 7 8 5.5 VGS = 4 V 5 4.5 20 4 12 8 16 0 Common source Tc = 25 °C Pulse test ID = 3.5 A 1 1.8 4 0 24 812 20 16 |
Similar Part No. - 2SK3085_06 |
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Similar Description - 2SK3085_06 |
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