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2SK3075 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK3075
Description  SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK3075 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK3075
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3075
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power
: PO ≥ 7.5W
Power Gain
: GP ≥ 11.7dB
Drain Efficiency
: ηD ≥ 50%
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
25
V
Drain Current
ID
5
A
Drain Power Dissipation
PD*
20
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
−45~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Unit: mm
JEDEC
JEITA
TOSHIBA
2−5N1A
Weight: 0.08 g (typ.)


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