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2SK3067 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3067
Description  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3067 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3067
2006-11-08
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate−source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
4.2
5.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
0.8
1.7
S
Input capacitance
Ciss
380
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turn−on time
ton
25
Fall time
tf
20
Switching time
Turn−off time
toff
80
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
9
Gate−source charge
Qgs
5
Gate−drain (“miller”) charge
Qgd
VDD ≈ 480 V, VGS = 10 V, ID = 2 A
4
nC
Source−Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
2
A
IDRP
t = 1 ms
5
A
Pulse drain reverse current
(Note 1)
IDRP
t = 100 μs
8
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
−1.5
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A / μs
5.0
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3067
Part No. (or abbreviation code)


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