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2SK2989 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2989 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2989 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.0 — 2.2 V VGS = 4 V, ID = 1.3 A — 240 330 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A — 120 150 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 1.3 2.6 — S Input capacitance Ciss — 145 — Reverse transfer capacitance Crss — 25 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 75 — pF Rise time tr — 16 — Turn−on time ton — 23 — Fall time tf — 27 — Switching time Turn−off time toff — 110 — ns Total gate charge (gate−source plus gate−drain) Qg — 6.5 — Gate−source charge Qgs — 5 — Gate−drain (“miller”) Charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 5 A — 1.5 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 15 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −1.5 V Marking K2989 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SK2989_06 |
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Similar Description - 2SK2989_06 |
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