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2SK2823 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2823 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SK2823 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA Drain-source breakdown voltage V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 1.5 V, ID = 0.1 mA 0.5 ⎯ 1.0 V Forward transfer admittance ⎪Yfs⎪ VDS = 1.5 V, ID = 10 mA 35 70 ⎯ mS Drain-source ON resistance 1 RDS (ON) 1 ID = 1 mA, VGS = 1.2 V ⎯ 15 50 Ω Drain-source ON resistance 2 RDS (ON) 2 ID = 10 mA, VGS = 1.5 V ⎯ 10 40 Ω Drain-source ON resistance 3 RDS (ON) 3 ID = 10 mA, VGS = 2.5 V ⎯ 7 28 Ω Input capacitance Ciss VDS = 1.5 V, VGS = 0, f = 1 MHz ⎯ 12 ⎯ pF Reverse transfer capacitance Crss VDS = 1.5 V, VGS = 0, f = 1 MHz ⎯ 3.4 ⎯ pF Output capacitance Coss VDS = 1.5 V, VGS = 0, f = 1 MHz ⎯ 12 ⎯ pF Turn-on time ton ⎯ 0.35 ⎯ Switching time Turn-off time toff VDD = 1.5 V, ID = 10 mA, VGS = 0~1.5 V ⎯ 0.2 ⎯ μs Switching Time Test Circuit (1) Test circuit (2) VIN VGS (3) VOUT VDS |
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