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2SK2823 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK2823
Description  Silicon N Channel MOS Type For Portable Equipment
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2823 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK2823
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 10 V, VDS = 0
⎯
⎯
1
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 100 μA, VGS = 0
20
⎯
⎯
V
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Gate threshold voltage
Vth
VDS = 1.5 V, ID = 0.1 mA
0.5
⎯
1.0
V
Forward transfer admittance
⎪Yfs⎪
VDS = 1.5 V, ID = 10 mA
35
70
⎯
mS
Drain-source ON resistance 1
RDS (ON) 1
ID = 1 mA, VGS = 1.2 V
⎯
15
50
Ω
Drain-source ON resistance 2
RDS (ON) 2
ID = 10 mA, VGS = 1.5 V
⎯
10
40
Ω
Drain-source ON resistance 3
RDS (ON) 3
ID = 10 mA, VGS = 2.5 V
⎯
7
28
Ω
Input capacitance
Ciss
VDS = 1.5 V, VGS = 0, f = 1 MHz
⎯
12
⎯
pF
Reverse transfer capacitance
Crss
VDS = 1.5 V, VGS = 0, f = 1 MHz
⎯
3.4
⎯
pF
Output capacitance
Coss
VDS = 1.5 V, VGS = 0, f = 1 MHz
⎯
12
⎯
pF
Turn-on time
ton
⎯
0.35
⎯
Switching time
Turn-off time
toff
VDD = 1.5 V, ID = 10 mA,
VGS = 0~1.5 V
⎯
0.2
⎯
μs
Switching Time Test Circuit
(1)
Test circuit
(2)
VIN
VGS
(3)
VOUT
VDS


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