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2SK330 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK330
Description  Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK330 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK330
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA)
• Complementary to 2SJ105
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = −30 V, VDS = 0
−1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = −100 μA
−50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
−0.7
−6.0
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4
mS
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0, IDSS = 5 mA
320
Ω
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
9.0
pF
Reverse transfer capacitance
Crss
VGD = −10 V, ID = 0, f = 1 MHz
2.5
pF
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)


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