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2SJ680 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ680 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  2SJ680 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = −200 V, VGS = 0 V ⎯ ⎯ −100 μA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −200 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −1.5 A ⎯ 1.6 2.0 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 410 ⎯ Reverse transfer capacitance Crss ⎯ 40 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 145 ⎯ pF Rise time tr ⎯ 20 ⎯ Turn-on time ton ⎯ 45 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-off time toff ⎯ 85 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge Qgs ⎯ 6 ⎯ Gate-drain (“Miller”) charge Qgd VDD ∼− −160 V, VGS = −10 V, ID = −2.5 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −2.5 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ −10 A Forward voltage (diode) VDSF IDR = −2.5 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time trr ⎯ 135 ⎯ ns Reverse recovery charge Qrr IDR = −2.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 0.81 ⎯ μC Marking Duty <= 1%, tw = 10 μs −10 V 0 V VGS RL = 66.7 Ω VDD ∼− −100 V ID = −1.5 A VOUT J680 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SJ680_06 |
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Similar Description - 2SJ680_06 |
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