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2SK2613 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. 2SK2613
Description  Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2613 Datasheet(HTML) 5 Page - Toshiba Semiconductor

   
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2SK2613
2006-11-09
5
10
μ
100
μ
1 m
10 m
100 m
1
10
0.001
0.01
0.1
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 0.833°C/W
Single pulse
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
rth − tw
Safe operating area
EAS – Tch
Drain-source voltage VDS (V)
Pulse width tw (S)
Channel temperature (initial) Tch (°C)
−15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 26.3 mH
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
0.01
1
0.1
0.03
0.05
1
0.3
0.5
10
3
5
10
3
100
30
10000
300
DC Operation
Tc
= 25°C
100
μs *
1 ms *
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated linearly
with increase in temperature.
ID max (pulsed) *
ID max (continuous)
VDSS max
1000 3000
100
30
50
0
25
200
400
600
1000
800
50
75
100
125
150


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