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2SK2232 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SK2232
Description  N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2232 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SK2232
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drain−source breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 12 A
0.057
0.08
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 12 A
0.036
0.046
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 12 A
10
16
S
Input capacitance
Ciss
1000
Reverse transfer capacitance
Crss
200
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
550
pF
Rise time
tr
20
Turn−on time
ton
30
Fall time
tf
55
Switching time
Turn−off time
toff
130
ns
Total gate charge (Gate−source
plus gate–drain)
Qg
38
Gate−source charge
Qgs
25
Gate−drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
13
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
25
A
Pulse drain reverse current
(Note 1)
IDRP
100
A
Forward voltage (diode)
VDSF
IDR = 25 A, VGS = 0 V
−1.8
V
Reverse recovery time
trr
50
ns
Reverse recovered charge
Qrr
IDR = 25 A, VGS = 0 V, dIDR / dt = 50 A / μs
35
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2232
Part No. (or abbreviation code)


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