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2SK2145 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK2145 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK2145 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V Marking Pin Assignment (top view) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD (Note 1) 300 mW Junction temperature Tj 125 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3L1C Weight: 0.016 g (typ.) |
Similar Part No. - 2SK2145_07 |
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Similar Description - 2SK2145_07 |
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