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2SK1310A Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SK1310A
Description  TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1310A Datasheet(HTML) 2 Page - Toshiba Semiconductor

  2SK1310A_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SK1310A_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SK1310A_07 Datasheet HTML 3Page - Toshiba Semiconductor 2SK1310A_07 Datasheet HTML 4Page - Toshiba Semiconductor 2SK1310A_07 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SK1310A
2007-11-01
2
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Output Power
Po
190
220
W
Drain Efficiency
ηD
VDD = 50 V, Iidle = 0.2 A × 2
Pi = 10 W, f = 230 MHz *
65
%
Drain-Source Breakdown Voltage
V (BR) DSS
ID = 10 mA, VGS = 0
100
V
Drain Cut-off Current
IDSS
VDS = 80 V, VGS = 0
1.0
mA
Gate Threshold Voltage
Vth
ID = 1 mA, VDS = 10 V
0.5
3.0
V
Drain-Source ON Resistance
RDS (on)
ID = 4 A, VGS = 10 V **
0.9
1.5
Drain-Source ON Voltage
VDS (on)
ID = 4 A, VGS = 10 V **
3.6
6.0
V
Forward Transfer Admittance
|Yfs|
ID = 3 A, VDS = 20 V **
0.9
1.3
S
Input Capacitance
Ciss
VDS = 50 V, VGS = 0, f = 1 MHz
100
pF
Output Capacitance
Coss
VDS = 50 V, VGS = 0, f = 1 MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS = 50 V, VGS = 0, f = 1 MHz
1
pF
*:
Push−Pull Operation
**:
Pulse Test
This transistor is the electrostatic sensitive device. Please handle with caution.


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