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2SK1310A Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK1310A
Description  TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1310A Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK1310A
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
Output Power
: Po ≥ 190 W (Min.)
Drain Efficiency
: ηD = 65% (Typ.)
Frequency
: f = 230 MHz
Push−Pull Structure Package
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
12
A
Reverse Drain Current
IDR
12
A
Drain Power Dissipation
PD
250
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
EIAJ
TOSHIBA
2−22C2A
Weight: 17.5 g
Unit in mm


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