2SK373

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK373

For Audio, High Voltage Amplifier and Constant Current

Applications

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

−100

V

Gate current

10

mA

Drain power dissipation

400

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate cut-off current

⎯

⎯

−1.0

nA

Gate-drain breakdown voltage

−100

⎯

⎯

V

Drain current

(Note)

0.6

⎯

6.5

mA

Gate-source cut-off voltage

−0.4

⎯

−3.5

V

Forward transfer admittance

1.5

4.6

⎯

mS

Input capacitance

⎯

13

⎯

pF

Reverse transfer capacitance

⎯

3

⎯

pF

Noise figure

NF

f

= 100 Hz

⎯

0.5

⎯

dB

Unit: mm

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1C

Weight: 0.21 g (typ.)