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2SJ304 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ304 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ304 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA Drain cut−off current IDSS VDS = −60 V, VGS = 0 V ― ― −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −60 ― ― V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ― −2.0 V VGS = −4 V, ID = −5 A ― 130 190 Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −7 A ― 80 120 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −7 A 5.0 8.0 ― S Input capacitance Ciss ― 1200 ― Reverse transfer capacitance Crss ― 220 ― Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ― 550 ― pF Rise time tr ― 20 ― Turn−on time ton ― 30 ― Fall time tf ― 25 ― Switching time Turn−off time toff ― 100 ― ns Total gate charge (Gate−source plus gate−drain) Qg ― 45 ― Gate−source charge Qgs ― 30 ― Gate−drain (“miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −14 A ― 15 ― nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ― ― ― −14 A Pulse drain reverse current (Note 1) IDRP ― ― ― −56 A Forward voltage (diode) VDSF IDR = −14 A, VGS = 0 V ― ― 1.7 V Reverse recovery time trr ― 110 ― ns Reverse recovery charge Qrr IDR = −14 A, VGS = 0 V dIDR / dt = 50 A / μs ― 0.18 ― μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. J304 Part No. (or abbreviation code) |
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