1SS402

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS402

High Speed Switching Applications

Two independent diodes are mounted on four-pin ultra-small packages that

are suitable for higher mounting densities.

Low forward voltage

Low reverse current

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

25

V

Reverse voltage

20

V

Maximum (peak) forward current

100 *

mA

Average forward current

50 *

mA

Surge Current (10ms)

1 *

A

Power dissipation

P

100 *

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*:

Unit rating. Total rating = Unit rating × 1.5

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.33

―

―

―

0.38

―

Forward voltage

―

―

0.50

0.55

V

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

3.9

5.0

pF

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-2U1A

Weight: 0.006 g(typ.)

Unit in mm

A7