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QM400HA-24B Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. QM400HA-24B
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM400HA-24B Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT
IC (A)
COLLECTOR CURRENT
IC (A)
BASE-EMITTER VOLTAGE
VBE (V)
BASE CURRENT
IB (A)
COLLECTOR CURRENT
IC (A)
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
–2
10
–1
10
0
10
1
10
500
400
300
200
100
0
01
2
3
4
5
Tj=25°C
IB=0.4A
IB=80mA
IB=0.8A
IB=0.2A
IB=0.1A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
2.2
4.2
3.8
3.4
3.0
2.6
Tj=25°C
VCE=2.8V
–1
10
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
Tj=25°C
Tj=125°C
IC=400A
IC=300A
IC=200A
IC=100A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
23 4 5 7
2
10
23 4 5 7
3
10
Tj=25°C
Tj=125°C
IB=530mA
VBE(sat)
VCE(sat)
–1
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
1
10
23 4 5 7
2 3 4 5 7
Tj=25°C
Tj=125°C
VCE=4.0V
4
10
2
10
3
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
23 4 5 7
2 3 4 5 7
3
10
Tj=25°C
Tj=125°C
2
ts
tf
ton
VCC=600V
–IB2=8A
IB1=800mA


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