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2SC5351 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5351 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC5351 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 520 V, IE = 0 ― ― 20 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 650 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IC = 0 450 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 13 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.2 A 20 ― 65 Collector-emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V Rise time tr ― ― 0.5 Storage time tstg ― ― 2.0 Switching time Fall time tf IB1 = 0.1 A, IB2 = −0.2 A, duty cycle ≤ 1% ― ― 0.3 μs Marking 20 μs VCC ≈ 200 V Output IB2 IB1 Input IC C5351 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SC5351_06 |
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Similar Description - 2SC5351_06 |
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