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2SC5266A Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SC5266A
Description  Silicon NPN Triple Diffused Type Switching Regulator Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5266A Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5266A
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5266A
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
• Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max)
• High breakdown voltage: VCEO = 400 V
• High DC current gain: hFE = 20 (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
7
A
Base current
IB
2
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)


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