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2SC5172 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. 2SC5172
Description  Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC5172 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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2SC5172
2006-11-10
3
Collector-emitter voltage VCE (V)
IC – VCE
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Common emitter
VCE = 5 V
Tc = 100°C
25
−40
5
3
2
1
0
4
0.4
0.6
0.8
0.2
0
1.4
1.0
1.2
3
1
0.1
1
0.05
Common emitter
IC/IB = 5
0.01
30
10
Tc = 100°C
−40
25
10
0.3
0.1
5
3
2
1
0
4
4
6
8
2
0
10
IB = 20 mA
Common
emitter
Tc = 25°C
50
100
200
300
400
500
10
3
0.1
1
0.01
100
10
−40
25
Common emitter
VCE = 5 V
Tc = 100°C
1
300


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